Semiconductor device having a ternary compound low resistive ele

Details Semiconductor device having a ternary compound low resistive ele Semiconductor device having a ternary compound low resistive ele

1997-09-30

1999-12-14

Booth, Richard

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438303, 438595, 438655, H01L 213205, H01L 214763

Patent

active

06001718&

ABSTRACT:
A gate oxide film is formed on a silicon substrate, and a poly-silicon layer is formed on the gate oxide film. A tungsten silicide layer containing titanium is formed on the poly-silicon layer. A silicon nitride film is formed on the tungsten silicide layer. The poly-silicon layer, the tungsten silicide layer containing titanium, and the tungsten silicide layer containing titanium are subjected to patterning, and are thereafter, thermally oxidized to form oxide film on side walls of the layers. In this thermal oxidization, titanium deoxidizes and removes a native oxide film on the poly-silicon layer, so that silicon can be diffused from the poly-silicon layer to the tungsten silicide layer.

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