Semiconductor device having a T-shaped field oxide layer and a m

Details Semiconductor device having a T-shaped field oxide layer and a m Semiconductor device having a T-shaped field oxide layer and a m

1997-06-26

1999-11-16

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438404, 438405, 438154, 438165, 438219, 438225, 438227, 438425, H01L 2176

Patent

active

059857331

ABSTRACT:
A semiconductor device having an adjacent P-well and N-well, such as a complementary metal oxide semiconductor (CMOS) transistor, on a silicon on insulator (SOI) substrate has a latch-up problem caused by the parasitic bipolar effect. This invention provides a semiconductor device removing the latch-up problem and methods for fabricating the same. A semiconductor device according to the present invention has a T-shaped field oxide layer connected to a buried oxide layer of the SOI substrate to prevent the latch-up problem.

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Translations of "VLSI Manufacturing Technology" by Taren Chuang p. 107 and p. 348.
Translation of "CMOS Digital IC" by Jengpang Kuo, p. 59.
Semiconductor Device.

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