Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2007-02-06
2007-02-06
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S079000, C257S108000, C257S773000, C257S750000, C438S723000, C438S706000
Reexamination Certificate
active
09585682
ABSTRACT:
An etchant including C2HxFy, where x is an integer from two to five, inclusive, where y is an integer from one to four, inclusive, and where x plus y equals six, etches doped silicon dioxide with selectivity over both undoped silicon dioxide and silicon nitride. Thus, undoped silicon dioxide and silicon nitride may be employed as etch stops in dry etch processes which utilize the C2HxFy-containing etchant. C2HxFymay be employed as either a primary etchant or as an additive to another etchant or etchant mixture. The invention also includes semiconductor devices that include structures that have been patterned with an etchant of the present invention or in accordance with the method of the present invention. Specifically, the present invention includes semiconductor devices including doped silicon oxide structures with substantially vertical sidewalls and adjacent undoped silicon oxide or silicon nitride structures exposed adjacent the sidewall.
REFERENCES:
patent: 3886569 (1975-05-01), Basi et al.
patent: 4529476 (1985-07-01), Kawamoto et al.
patent: 4806199 (1989-02-01), Gualandris
patent: 4807016 (1989-02-01), Douglas
patent: 5202849 (1993-04-01), Nozaki
patent: 5275972 (1994-01-01), Ogawa et al.
patent: 5286344 (1994-02-01), Blalock et al.
patent: 5300463 (1994-04-01), Cathey et al.
patent: 5424570 (1995-06-01), Sardella et al.
patent: 5428240 (1995-06-01), Lur
patent: 5468342 (1995-11-01), Nulty et al.
patent: 5562801 (1996-10-01), Nulty
patent: 5626716 (1997-05-01), Bosch et al.
patent: 5648175 (1997-07-01), Russell et al.
patent: 5695658 (1997-12-01), Alwan
patent: 5759888 (1998-06-01), Wang et al.
patent: 5814563 (1998-09-01), Ding et al.
patent: 5817580 (1998-10-01), Violette
patent: 5828096 (1998-10-01), Ohno et al.
patent: 5831899 (1998-11-01), Wang et al.
patent: 5841195 (1998-11-01), Lin et al.
patent: 5843845 (1998-12-01), Chung
patent: 5843847 (1998-12-01), Pu et al.
patent: 5855962 (1999-01-01), Cote et al.
patent: 5948701 (1999-09-01), Chooi et al.
patent: 5965035 (1999-10-01), Hung et al.
patent: 6018184 (2000-01-01), Becker
patent: 6051870 (2000-04-01), Ngo
patent: 6066555 (2000-05-01), Nulty et al.
patent: 6077743 (2000-06-01), Chen
patent: 6110831 (2000-08-01), Cargo et al.
patent: 6117791 (2000-09-01), Ko et al.
patent: 6121671 (2000-09-01), Ko et al.
patent: 6239017 (2001-05-01), Lou et al.
patent: 6277720 (2001-08-01), Doshi et al.
patent: 6303496 (2001-10-01), Yu
patent: 6483172 (2002-11-01), Cote et al.
patent: 0721205 (1996-07-01), None
patent: 61251138 (1986-08-01), None
patent: 07-161702 (1995-06-01), None
patent: 09-027483 (1997-01-01), None
patent: 10022385 (1998-01-01), None
patent: 11-204507 (1999-07-01), None
patent: 2000-156366 (2000-06-01), None
patent: WO 98/49719 (1998-11-01), None
Wolf, Stanley, “Silicon Processing for the VLSI Era,” cover pages and pp. 194-195, vol. 2:Process Integration.
Wolf, S., et al., Silicon Processing for the VLSI Era, vol. 1, Process Technology, Lattice Press, 1986, pp. 520-523.
Williams, K., BSAC Etch Rates for Micromachining and IC Processing, U.C. Berkeley Microfabrication Lab., Berkeley Sensor & Actuator Center, http://www-bsac.eecs,berkeley.edu/db/etchrates.html.
Williams, K., VLSI Etchants, Chapter 1.5, Rev. Nov. 1997, http://microlab.berkeley,edu/labmanual/chap1/1.5.html.
Blalock Guy T.
Ko Kei-Yu
Li Li
Chu Chris C.
Micro)n Technology, Inc.
Parker Kenneth
TraskBritt
LandOfFree
Semiconductor device having a substrate an undoped silicon... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having a substrate an undoped silicon..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a substrate an undoped silicon... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3835042