Semiconductor device having a structure for detecting a boosted

Details Semiconductor device having a structure for detecting a boosted Semiconductor device having a structure for detecting a boosted

1998-04-23

2000-01-04

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257379, 257537, 257538, 257754, H01L 29788, H01L 2976, H01L 2994, H01L 31062

Patent

active

06011293&

ABSTRACT:
A p-type well and an n-type well surrounding the p-type well are formed in a p-type semiconductor substrate under a field insulating film. A polysilicon resistance film is formed on the field insulating film simultaneously with a floating gate formed in a memory cell region. A polycide conductive film is formed on a interlayer insulating film simultaneously with an auxiliary bit line formed in the memory cell region, and the polycide conductive film is connected to the resistance film by a contact formed in a via hole. A wiring line formed on an interlayer insulating film is connected to the polycide conductive film by a contact formed in a via hole penetrating the interlayer insulating film. The two via holes are formed at positions corresponding to regions in the p-type well. A negative voltage is applied to the wiring line, and the potential of a predetermined point on the resistance film is measured.

REFERENCES:
patent: 5751050 (1998-05-01), Ishikawa et al.
patent: 5801418 (1998-09-01), Ranjan
patent: 5874770 (1999-02-01), Saia et al.
patent: 5903033 (1999-05-01), Shaw

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