Semiconductor device having a stress layer for applying...

Details Semiconductor device having a stress layer for applying... Semiconductor device having a stress layer for applying...

2006-07-11

2006-07-11

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S303000

Reexamination Certificate

active

07075135

ABSTRACT:
A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.

REFERENCES:
patent: 6348368 (2002-02-01), Yamazaki et al.
patent: 6432767 (2002-08-01), Torii et al.

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