Semiconductor device having a strained raised source/drain

Details Semiconductor device having a strained raised source/drain Semiconductor device having a strained raised source/drain

2006-10-03

2006-10-03

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S382000

Reexamination Certificate

active

07115955

ABSTRACT:
A manufacturable way to recess silicon that employs an end point detection method for the recess etch and allows tight tolerances on the recess is described for fabricating a strained raised source/drain layer. The method includes forming a monolayer comprising oxygen and carbon on a surface of a doped semiconductor substrate; forming an epi Si layer atop the doped semiconductor substrate; forming at least one gate region on the epi Si layer; selectively etching exposed portions of the epi layer, not protected by the gate region, stopping on and exposing the doped semiconductor substrate using end point detection; and forming a strained SiGe layer on the exposed doped semiconductor substrate. The strained SiGe layer serves as a raised layer in which source/drain diffusion regions can be subsequently formed.

REFERENCES:
patent: 5155571 (1992-10-01), Wang et al.
patent: 5218213 (1993-06-01), Gaul et al.
patent: 6342422 (2002-01-01), Wu
patent: 6358806 (2002-03-01), Puchner
patent: 6406973 (2002-06-01), Lee
patent: 6420218 (2002-07-01), Yu
patent: 6499888 (2002-12-01), Wu
patent: 6504214 (2003-01-01), Yu et al.
patent: 6621131 (2003-09-01), Murthy et al.
patent: 6693934 (2004-02-01), Wang
patent: 6878628 (2005-04-01), Sophie et al.
patent: 6911386 (2005-06-01), Lee et al.
patent: 6939751 (2005-09-01), Zhu et al.
patent: 6946358 (2005-09-01), Doris et al.
patent: 2001/0040292 (2001-11-01), Hahn et al.
patent: 2001/0048119 (2001-12-01), Mizuno et al.
patent: 2003/0155615 (2003-08-01), Yoshida et al.
patent: 2003/0218212 (2003-11-01), Lee et al.
patent: 2004/0241916 (2004-12-01), Chau et al.
patent: 2005/0164433 (2005-07-01), Doris et al.
patent: 2005/0170604 (2005-08-01), Orlowski et al.

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