Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-06-01
1998-04-14
Monin, Donald
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257306, 257532, H01L 21265, H01L 2170
Patent
active
057395640
ABSTRACT:
A static-random-access memory cell comprising floating node capacitors is disclosed. In one embodiment, the storage nodes acts as the first plates for the floating node capacitors, and a conductive member acts as the second plates for the floating node capacitors. The conductive member also electrically connects the second plates together, but is not electrically connected to other parts of the memory cell. In another embodiment, a conductive member acts as the second plates of a plurality of memory cells. The conductive member also electrically connects the second plates together, but is not electrically connected to other parts of the memory cells. Processes for forming the memory cells is also disclosed.
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Baker Frank Kelsey
Kirsch Howard C.
Kosa Yasunobu
McNelly Thomas F.
Meyer George R.
Monin Donald
Motorola Inc.
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