Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-06
2010-12-28
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S375000
Reexamination Certificate
active
07859058
ABSTRACT:
An isolation insulating film is formed so that an active region of a first access transistor and a substrate contact region can be integrated with each other in a plan view. A dummy gate electrode is formed on the semiconductor substrate between the active region of the first access transistor and the substrate contact region. The dummy gate electrode is electrically connected to a P-type impurity region of the substrate contact region.
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Japanese Notice of Reasons for Rejection, w/ English translation thereof, issued in Japanese Patent Application No. JP 2006-130024 dated May 25, 2010.
Ishikura Satoshi
Nakamura Masayuki
Yamada Takayuki
Jahan Bilkis
Louie Wai-Sing
McDermott Will & Emery LLP
Panasonic Corporation
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