Semiconductor device having a spacer layer doped with slower...

Details Semiconductor device having a spacer layer doped with slower... Semiconductor device having a spacer layer doped with slower...

2006-11-07

2006-11-07

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S332000, C257S334000, C257S328000, C257S375000

Reexamination Certificate

active

07132715

ABSTRACT:
A semiconductor device includes a silicon substrate heavily-doped with phosphorous. A spacer layer is disposed over the substrate and is doped with dopant atoms having a diffusion coefficient in the spacer layer material that is less than the diffusion coefficient of phosphorous in silicon. An epitaxial layer is also disposed over the substrate. A device layer is disposed over the substrate, and over the epitaxial and spacer layers.

REFERENCES:
patent: 4893160 (1990-01-01), Blanchard
patent: 5814858 (1998-09-01), Williams
patent: 6057588 (2000-05-01), Yamazaki
patent: 6331467 (2001-12-01), Brown et al.
patent: 6686251 (2004-02-01), Igarashi
patent: 2003/0203593 (2003-10-01), Beaman
patent: 2004/0171229 (2004-09-01), Beasom

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