Semiconductor device having a silicide layer and...

Details Semiconductor device having a silicide layer and... Semiconductor device having a silicide layer and...

2006-01-31

2009-10-20

Vu, Hung (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S664000, C438S682000, C438S683000

Reexamination Certificate

active

07605068

ABSTRACT:
Provided is a semiconductor device and a manufacturing method thereof. The method includes the steps of: forming a thin film transistor including a substrate having a semiconductor layer and silicon, a gate insulation layer formed on the semiconductor layer, a gate electrode formed on the gate insulation layer, and source and drain regions formed in the semiconductor layer; forming a first metal layer on the substrate having the semiconductor layer and the gate electrode; forming a second metal layer on the first metal layer; forming a third metal layer on the second metal layer; forming a nitride layer on the third metal layer; and annealing the substrate having the nitride layer, and forming a silicide layer on the gate electrode and the source and drain regions.

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Yong-Jin Kim et al., “The Effect of Triple Capping Layer (Ti/Ni/TiN0 on the Electrical and Structural Properties of Nickel Monosilicide” Journal of the Electrochemical Society, 153 (1) G35-G38 (Nov. 10, 2005) 0013-4651/2005/153(1)/G35/4 The Electrochemical Society, Inc. (pp. G35-G38).

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