Semiconductor device having a separation structure for high...

Details Semiconductor device having a separation structure for high... Semiconductor device having a separation structure for high...

2005-01-04

2005-01-04

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

In integrated circuit

C257S493000, C257S526000, C257S546000, C257S549000, C257S552000

Reexamination Certificate

active

06838745

ABSTRACT:
An n-type well is formed in a p−-type semiconductor substrate and a p−-type epitaxial layer is formed on; the n-type well. An n−-type well is formed in the, p-type epitaxial layer on the n-type well so as to allow a RESURF operation. A p-type island is formed in the n−-type well at a position above the n-type well to form an island region for high withstand-voltage separation. Thus, the withstand voltage of the separated island is improved.

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