Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1990-12-03
1992-12-01
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257471, 257616, H01L 2980
Patent
active
051683300
ABSTRACT:
A semiconductor device including a single crystal semiconductor host material having a surface; an ultrathin pseudomorphic single crystal epitaxial interlayer formed on the surface of the host material, wherein the interlayer is formed of a material and has a thickness selected so that the material of the interlayer is elastically deformed on the surface of the host material to match the lattice constant of the interlayer material with the lattice constant of the host material; and a further material incompatible with the host material when interfaced directly with the host material, but compatible with the interlayer, provided on the interlayer and thereby interfaced with the host material to perform a predetermined function with respect to the interlayer and the host material. In a preferred embodiment, the host material is a material selected from the group consisting of Ge, GaAs, InSb, InP, group II-V compounds and alloys thereof; the interlayer material is formed of pseudomorphic silicon, having a thickness of approximately 10 .ANG. and the further material is formed of SiO.sub.2 or a conductive material.
REFERENCES:
patent: 4961194 (1990-10-01), Kuroda et al.
patent: 4987095 (1991-01-01), Batey et al.
patent: 5019882 (1991-05-01), Solomon
Electronics Letters, Aug. 4, 1988, vol. 24, No. 16, "Electrical and Microstructural Characterization of an Ultrathin Silicon Interlayer used in a Silicon Dioxide/Germanium-Based MIS Structure", pp. 1010-1011, by Fountain et al.
Electronics Letters, Sep. 1, 1988, vol. 24 No. 18, "GaAs MIS structures with SiO.sub.2 using a thin silicon interlayer" pp. 1134-1135, by Fountain et al.
Appl. Phys. Lett. 52(21) May 23, 1988, "Metal contacts to GaAs with lev Schotky barrier height", pp. 1794-1796, by Waldrop et al.
Appl. Phys. Lett. 53(8), Aug. 22, 1988 "Gating of germanium surfaces using pseudomorphic silicon interlayers", pp. 692-694 by Vitkavage et al.
Fountain Gaius G.
Hattangady Sunil
Markunas Robert J.
Rudder Ronald A.
Vitkavage Daniel J.
Hille Rolf
Loke Steven
Research Triangle Institute
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