Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2008-11-07
2010-12-21
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257S773000, C257S787000, C257SE21499, C257SE23011
Reexamination Certificate
active
07855464
ABSTRACT:
A semiconductor chip has a main surface. A conductive portion is provided on the main surface and made from a material having conductivity and malleability. A sealing resin portion has a surface facing the main surface. An electrode is provided on the conductive portion and passes through the sealing resin portion between the conductive portion and the surface. As a result, there is provided a semiconductor device that can be downsized.
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Office Action issued Aug. 13, 2010, in German Application No. DE 10 2009 011 233.2-33, filed Mar. 2, 2009 (with English language translation) 10 pages.
Mitsubishi Electric Corporation
Monbleau Davienne
Nguyen Dilinh P
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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