Semiconductor device having a semi-insulating layer

Details Semiconductor device having a semi-insulating layer Semiconductor device having a semi-insulating layer

1994-03-09

1996-09-03

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257487, 257488, 257489, 257630, 257636, 257638, 257646, H02L 2976

Patent

active

055526250

ABSTRACT:
A semiconductor device has a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type contacted by respective first and second electrodes. A semi-insulating layer extends between the first and second electrodes and there is a first insulating layer between the semi-insulating layer and the first semiconductor region. The sheet resistivity of the semi-insulating layer varies, and this improves the high breakdown voltage of the p-n junction of the semiconductor device between the first and second semiconductor layers, by acting as a shield for charges included on a passivation insulation layer covering the semi-insulating layer and the first and second electrodes. Third semiconductor regions, with corresponding third electrodes, extend around, and are spaced from, the second semiconductor region. The third electrodes extend over the parts of the first semiconductor region adjacent the third semiconductor regions, and this also serve to improve the breakdown voltage. The second electrode may also extend over the part of the first semiconductor region adjacent the second semiconductor region to cover the p-n junction therebetween.

REFERENCES:
patent: 4803528 (1989-02-01), Pankove
patent: 5086332 (1992-02-01), Nakagawa et al.
patent: 5107323 (1992-04-01), Knolle et al.
patent: 5113237 (1992-05-01), Stengl
Full English Translation of Japan Kokai 52-027032 published on Mar. 1977.

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