Patent
1991-06-12
1992-05-05
Jackson, Jr., Jerome
357 16, 357 59, H01L 29167, H01L 2972
Patent
active
051112663
ABSTRACT:
A bipolar transistor includes a base region made of silicon crystal doped with a first impurity to a first level so as to establish a first carrier concentration in the base region and an emitter region made of silicon crystal doped with a second impurity to a second level substantially larger than the first level by a predetermined factor so as to establish a second carrier concentration in the emitter region, in which the second impurity exceeds the solubility limit of the second impurity in silicon crystal. The first and second levels are chosen in such a range that a difference in the carrier concentrations between the emitter region and the base region decreases substantially with increasing impurity level in the base region.
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Eshita Takashi
Furumura Yuji
Maeda Mamoru
Mieno Fumitake
Nakazawa Tsutomu
Fujitsu Limited
Jackson, Jr. Jerome
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