Semiconductor device having a recess channel and method for...

Details Semiconductor device having a recess channel and method for... Semiconductor device having a recess channel and method for...

2008-06-17

2009-11-17

Menz, Douglas M (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S588000

Reexamination Certificate

active

07618885

ABSTRACT:
Provided is a semiconductor device having recess channel, comprising a semiconductor substrate having first and second trenches disposed to cross each other on both sides of an active region among adjoining regions between an active region and element-isolation films; a gate insulation film disposed on the semiconductor substrate of the active region; a first gate line disposed on the gate insulation film, and crossing the active region and overlapping with the first trench; and a second gate line disposed on the gate insulation film, and crossing the active region while overlapping with the second trench.

REFERENCES:
patent: 7244650 (2007-07-01), Suh et al.
patent: 2004/0150056 (2004-08-01), Yang et al.
patent: 2004/0195608 (2004-10-01), Kim et al.
patent: 2005/0077568 (2005-04-01), Park et al.
patent: 2006/0205162 (2006-09-01), Suh

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