Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-12-27
1995-09-12
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257362, 257363, 257378, 257379, H01L 2906, H01L 2978
Patent
active
054499399
ABSTRACT:
A semiconductor device has an internal circuit, an output transistor and a protective transistor for protecting the output transistor and the internal circuit against an ESD-induced destruction caused by a surge pulse entering from an input/output terminal. The sum of a first distance between a contact for connecting an input/output terminal with the collector of the protective transistor and a field oxide film and a second distance between a contact for connecting the input/output terminal with the emitter of the protective transistor and the field oxide film overlying the base of the laterally formed protective transistor is made smaller than the sum of a third distance between a contact for connecting the input/output terminal with the drain of the output transistor and the gate electrode of the output transistor and a fourth distance between a contact for connecting a potential line with the source of the output transistor and the gate electrode of the output transistor. Besides, the effective channel length of the output transistor is made longer than the effective base width of the protective transistor.
REFERENCES:
patent: 4893157 (1990-01-01), Miyazawa et al.
patent: 5291051 (1994-03-01), Hoang et al.
Horiguchi Yoko
Narita Kaoru
NEC Corporation
Ngo Ngan V.
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