Semiconductor device having a protection circuit

Details Semiconductor device having a protection circuit Semiconductor device having a protection circuit

2005-05-10

2005-05-10

Hu, Shouxiang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S356000, C257S392000, C257S500000

Reexamination Certificate

active

06891210

ABSTRACT:
The semiconductor device includes a plurality of transistors, wherein one of the transistors that has the thinnest gate dielectric layer is selected to serve as a power source protection element, among a plurality of transistors, each having a gate dielectric layer of an independently set film thickness, disposed on a same substrate to be operated by a voltage from a same power source. Also, a threshold voltage of the transistor selected as the power source protection element is set higher than other transistor that also has the thinnest gate dielectric layer.

REFERENCES:
patent: 5239195 (1993-08-01), Compagne
patent: 5646808 (1997-07-01), Nakayama
patent: 6198140 (2001-03-01), Muramoto et al.
patent: 6465308 (2002-10-01), Cheng et al.
patent: 20010045670 (2001-11-01), Nojiri
patent: 20030173630 (2003-09-01), Lin et al.

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