Semiconductor device having a power cutoff transistor

Details Semiconductor device having a power cutoff transistor Semiconductor device having a power cutoff transistor

2011-08-30

2011-08-30

Sefer, A. (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S127000, C257S371000, C257SE27060

Reexamination Certificate

active

08008733

ABSTRACT:
Disclosed herein is a semiconductor device having a power cutoff transistor including a semiconductor substrate of a first conductivity type; and first and second wells of the first conductivity type formed to be spaced from each other in the semiconductor substrate.

REFERENCES:
patent: 5250833 (1993-10-01), Watanabe
patent: 6144079 (2000-11-01), Shirahata et al.
patent: 7759740 (2010-07-01), Masleid et al.
patent: 2004/0164354 (2004-08-01), Mergens et al.
patent: 2006/0024929 (2006-02-01), Kim
patent: 2006/0076575 (2006-04-01), Masuoka
patent: 2006/0102961 (2006-05-01), Ohkubo et al.
patent: 05-003295 (1993-01-01), None
patent: 08-186180 (1996-07-01), None
patent: 09-107072 (1997-04-01), None
patent: 10-032481 (1998-02-01), None
patent: 10-303370 (1998-11-01), None
patent: 2002-368124 (2002-12-01), None
patent: 2006-114630 (2006-04-01), None
patent: WO-2004/075295 (2004-09-01), None
Japanese Office Action issued Apr. 6, 2010 for corresponding Japanese Application No. 2008-153083.

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