Semiconductor device having a plurality of misfets formed on...

Details Semiconductor device having a plurality of misfets formed on... Semiconductor device having a plurality of misfets formed on...

2011-07-19

2011-07-19

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S202000, C257S211000, C257S335000, C257S336000, C257S343000, C257S344000, C257S390000, C257S408000, C257SE29012, C257S337000

Reexamination Certificate

active

07982263

ABSTRACT:
In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs13(P1) for leading out electrodes on a source region10, a drain region9and leach-through layers3(4), to which a first layer wirings11a,11d(M1) are connected and, further, backing second layer wirings12ato12dare connected on the conductor plugs13(P1) to the first layer wirings11s,11d(M1).

REFERENCES:
patent: 4115914 (1978-09-01), Harari
patent: 4568958 (1986-02-01), Baliga
patent: 4610078 (1986-09-01), Matsukawa et al.
patent: 4622573 (1986-11-01), Bakeman et al.
patent: 4631565 (1986-12-01), Tihanyi
patent: 4837609 (1989-06-01), Gurvitch et al.
patent: 5019774 (1991-05-01), Rosenberg
patent: 5045916 (1991-09-01), Vor et al.
patent: 5192989 (1993-03-01), Matsushita et al.
patent: 5227660 (1993-07-01), Horiuchi et al.
patent: 5292681 (1994-03-01), Lee et al.
patent: 5293077 (1994-03-01), Seki et al.
patent: 5459339 (1995-10-01), Sakurai et al.
patent: 5463241 (1995-10-01), Kubo
patent: 5544102 (1996-08-01), Tobita et al.
patent: 5592415 (1997-01-01), Kato et al.
patent: 5612564 (1997-03-01), Fujishima et al.
patent: 5640032 (1997-06-01), Tomioka
patent: 5666007 (1997-09-01), Chung
patent: 5703390 (1997-12-01), Itoh
patent: 5757083 (1998-05-01), Yang
patent: 5760440 (1998-06-01), Kitamura et al.
patent: 5852318 (1998-12-01), Chikamatsu et al.
patent: 5892258 (1999-04-01), Kobatake
patent: 5903034 (1999-05-01), Sakamoto et al.
patent: 5907183 (1999-05-01), Takeuchi
patent: 5910673 (1999-06-01), Hsu et al.
patent: 5925901 (1999-07-01), Tsutsui
patent: 5965922 (1999-10-01), Matsui
patent: 6001710 (1999-12-01), Francois et al.
patent: 6034410 (2000-03-01), Chan et al.
patent: 6078075 (2000-06-01), Widdershoven
patent: 6078082 (2000-06-01), Bulucea
patent: 6114901 (2000-09-01), Singh et al.
patent: 6160297 (2000-12-01), Shimizu et al.
patent: 6191455 (2001-02-01), Shida
patent: 6191460 (2001-02-01), Choi et al.
patent: 6204539 (2001-03-01), Oyamatsu
patent: 6218904 (2001-04-01), Panther
patent: 6313508 (2001-11-01), Kobayashi
patent: 6316809 (2001-11-01), Eshraghi et al.
patent: 6331458 (2001-12-01), Anjum et al.
patent: 6346728 (2002-02-01), Inoue et al.
patent: 6441408 (2002-08-01), Porst et al.
patent: 6492872 (2002-12-01), Fujioka et al.
patent: 6501110 (2002-12-01), Mukai et al.
patent: 6608357 (2003-08-01), Yamazaki et al.
Hitachi Hyoron vol. 78, No. 11 (Nov. 1996), pp. 21-26.
ISSCC 98, Digest of Technical Papers, Feb. 5, 1998, pp. 50-55.
IEDM 97 Technical Digest, 1997, pp. 51-54.
Nikkei Electronics 1998, 11, 2, No. 729, pp. 238-245.

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