Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Self-aligned
Reexamination Certificate
2011-08-23
2011-08-23
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Self-aligned
C257S502000, C257SE27067, C257SE21644
Reexamination Certificate
active
08003476
ABSTRACT:
A semiconductor device has a configuration in which more than three kinds of wells are formed with small level differences. One kind of well from among the more than three kinds of wells has a surface level higher than other kinds of wells from among the more than three kinds of wells. The one kind of well is formed adjacent to and self-aligned to at least one kind of well from among the other kinds of wells. The other kinds of wells are different in one of a conductivity type, an impurity concentration and a junction depth, and include at least two kinds of wells having the same surface level.
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Kijima Masato
Ueda Naohiro
Yoshida Masaaki
Dickstein & Shapiro LLP
Ricoh & Company, Ltd.
Vu David
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