Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1995-05-12
1997-10-14
Whitehead, Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 57, 257 64, 257 72, 257 75, 257291, H01L 2904, H01L 2976
Patent
active
056775490
ABSTRACT:
A semiconductor circuit having a plurality of crystalline thin film transistors possessing different electrical characteristics which are formed on a substrate having an active matrix region and a driver circuit region. At least one first thin film transistor comprising a first crystalline silicon film is formed on the active matrix region of the substrate, while at least one second thin film transistor comprising a second crystalline silicon film is formed on the driver circuit region. The crystalline film of each of the first thin film transistors contains a catalyst element capable of promoting the crystallization of silicon at a higher concentration than the crystalline film of each of the second thin film transistors.
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Takayama Toru
Takemura Yasuhiko
Zhang Hongyong
Blanche Bradley D.
Ferguson Jr. Gerald J.
Semiconductor Energy Laboratory Co,. Ltd.
Whitehead Carl W.
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