Semiconductor device having a non-straight line pattern with...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S309000

Reexamination Certificate

active

06974992

ABSTRACT:
A method of forming a device pattern of a semiconductor device. The method includes the steps of carrying out an over-exposure to a resist film using a mask which has transmission regions which are positioned about a circumference of each of intended patterns of a resist film. Then carrying out a development of the resist film to form a resist pattern having the intended patterns. And then forming a device pattern of a semiconductor device by use of the resist pattern.

REFERENCES:
patent: 4525448 (1985-06-01), Ghosh
patent: 4657379 (1987-04-01), Suwa
patent: 5298365 (1994-03-01), Okamoto et al.
patent: 5405799 (1995-04-01), Woo et al.
patent: 5585210 (1996-12-01), Lee et al.
patent: 5712063 (1998-01-01), Ahn et al.
patent: 5725973 (1998-03-01), Han et al.
patent: 5736300 (1998-04-01), Mizuno et al.
patent: 6418008 (2002-07-01), Jost et al.
patent: 61-270823 (1986-12-01), None
patent: 7-134395 (1995-05-01), None

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