Semiconductor device having a nitride-based hetero-structure...

Details Semiconductor device having a nitride-based hetero-structure... Semiconductor device having a nitride-based hetero-structure...

2005-02-15

2005-02-15

Thai, Luan (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

Group iii-v compound

C257S613000, C257S076000, C438S604000

Reexamination Certificate

active

06856005

ABSTRACT:
The object of the invention is to provide a semiconductor device having a nitride-based hetero-structure in which an epitaxial nitride film has a uniformly flat surface at a single molecule level, and a method of easily fabricating such a device. The object of the invention is achieved by providing a semiconductor device comprising a sapphire substrate whose c-surface is modified to be nitride-surfaced, GaN buffer layer, N polarity GaN layer, N polarity AlN layer, N polarity InN/InGaN multi-layered device structure, Al polarity AlN layer, and GaN cap layer.

REFERENCES:
patent: 6350666 (2002-02-01), Kryliouk

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