Semiconductor device having a nanoscale conductive structure

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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Details

C257SE23010, C257SE23145, C257SE21586, C257S773000, C257S774000, C257S758000, C257S288000, C427S058000

Reexamination Certificate

active

07659624

ABSTRACT:
A semiconductor device includes a substrate, an insulating layer having an opening, the opening exposing a portion of the substrate, a hydrophobic layer covering substantially only a sidewall and a top surface of the insulating layer, and a nanoscale conductive structure on the exposed portion of the substrate.

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