Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-04-16
2010-02-09
Williams, Alexander O (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23010, C257SE23145, C257SE21586, C257S773000, C257S774000, C257S758000, C257S288000, C427S058000
Reexamination Certificate
active
07659624
ABSTRACT:
A semiconductor device includes a substrate, an insulating layer having an opening, the opening exposing a portion of the substrate, a hydrophobic layer covering substantially only a sidewall and a top surface of the insulating layer, and a nanoscale conductive structure on the exposed portion of the substrate.
REFERENCES:
patent: 6062931 (2000-05-01), Chuang et al.
patent: 2002/0167375 (2002-11-01), Hoppe et al.
patent: 2003/0179559 (2003-09-01), Engelhardt et al.
patent: 2004/0009115 (2004-01-01), Wee et al.
patent: 2004/0108804 (2004-06-01), Hsu
patent: 2006/0278901 (2006-12-01), Dangelo et al.
patent: 2007/0247048 (2007-10-01), Zhang et al.
patent: 2007/0284631 (2007-12-01), Hsu et al.
patent: 2008/0237858 (2008-10-01), Nihei
patent: 2008/0296537 (2008-12-01), Gordon et al.
patent: 2008/0311818 (2008-12-01), Kim et al.
patent: 2009/0027036 (2009-01-01), Nuckolls et al.
patent: 2005-075666 (2005-03-01), None
patent: 2005-081519 (2005-03-01), None
patent: 10-2000-0033455 (2000-06-01), None
patent: 10-2001-0058663 (2001-07-01), None
patent: 10-2002-0041664 (2002-06-01), None
Kolake Subramanya Mayya
Lee Sun-Woo
Yeo In-Seok
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
Williams Alexander O
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