Semiconductor device having a multiple thickness interconnect

Details Semiconductor device having a multiple thickness interconnect Semiconductor device having a multiple thickness interconnect

2007-02-13

2007-02-13

Smoot, Stephen W. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S775000

Reexamination Certificate

active

10946675

ABSTRACT:
A conductive line varies in thickness to assist in overcoming RC delays and noise coupling. By varying line thickness, variation in conductor width is avoided if necessary to maintain a specified minimum pitch between conductors while maintaining predetermined desired RC parameters and noise characteristics of the conductive line. Conductor depth variation is achieved by etching a dielectric layer to different thicknesses. A subsequent conductive fill over the dielectric layer and in the differing thicknesses results in a conductive line that varies in thickness. Different conductive line thicknesses available at a particular metal level can additionally be used for semiconductor structures other than a signal or a power supply conductive line, such as a contact, a via or an electrode of a device. The thickness analysis required to determine how interconnect thickness is varied in order to meet a desired design criteria may be automated and provided as a CAD tool.

REFERENCES:
patent: 5258328 (1993-11-01), Sunada et al.
patent: 5286675 (1994-02-01), Chen et al.
patent: 5539255 (1996-07-01), Cronin
patent: 5663101 (1997-09-01), Cronin
patent: 5960254 (1999-09-01), Cronin
patent: 6023099 (2000-02-01), Komuro
patent: 6100177 (2000-08-01), Noguchi
patent: 6225207 (2001-05-01), Parikh
patent: 6258727 (2001-07-01), Maccagnan
patent: 6331734 (2001-12-01), Hieda
patent: 6361402 (2002-03-01), Canaperi et al.
patent: 6392299 (2002-05-01), Gayet
patent: 6407455 (2002-06-01), Wald et al.
patent: 2001/0031516 (2001-10-01), Bouldin et al.
patent: 2002/0022370 (2002-02-01), Sun et al.
patent: 2002/0072217 (2002-06-01), Tseng et al.

Affiliated with

Also associated with

Rating

Semiconductor device having a multiple thickness interconnect does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having a multiple thickness interconnect, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a multiple thickness interconnect will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3826214