Semiconductor device having a multiple-emitter transistor

Details Semiconductor device having a multiple-emitter transistor Semiconductor device having a multiple-emitter transistor

1979-01-02

1981-03-10

Larkins, William D.

Static information storage and retrieval

Systems using particular element

Flip-flop

357 36, 357 50, 357 51, 365155, H01L 2710, G11C 1140

Patent

active

042556740

ABSTRACT:
A semiconductor device includes a bipolar transistor having at least two emitter zones. One of the emitter zones is divided into two separate sub-zones, which are separated by a conductive channel which connects the base zone to an adjoining resistive zone. Two substantially identical transistors of the type disclosed may be interconnected in a cross-coupled arrangement to form an ECL memory cell.

REFERENCES:
patent: 3648125 (1972-03-01), Peltzer
patent: 3936813 (1976-02-01), Tsang
patent: 3979612 (1976-09-01), Mudge et al.
patent: 4011580 (1977-03-01), Kasperkovitz
patent: 4035784 (1977-07-01), Brown
patent: 4118728 (1978-10-01), Berry
patent: 4149177 (1979-04-01), Alter
Wiedmann, IBM Tech. Disclosure Bulletin, vol. 13, No. 5, Oct. 1970, p. 1316.
Wiedmann, IBM Tech. Disclosure Bulletin, vol. 13, No. 3, Aug. 1970, pp. 616-617.

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