Semiconductor device having a multilayer interconnection structu

Details Semiconductor device having a multilayer interconnection structu Semiconductor device having a multilayer interconnection structu

1995-03-10

1997-02-18

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257759, 257 40, 257773, 257791, 257642, H01L 2941, H01L 2951

Patent

active

056043805

ABSTRACT:
In a semiconductor device and a method of fabrication thereof, a resin film forms an interlayer film of the semiconductor device having a multilayer interconnection structure, and is formed by only one coating using coating liquid containing silicone ladder polymers represented by the chemical formula: (HO).sub.2 (R.sub.2 Si.sub.2 O.sub.3).sub.n H.sub.2. As a result, it is possible to improve long-term reliability of electric characteristics or the like, and simplify a process.

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patent: 5057336 (1991-10-01), Adachi et al.
patent: 5081202 (1992-01-01), Adachi et al.
patent: 5180691 (1993-01-01), Adachi et al.
patent: 5183846 (1993-02-01), Aiba et al.
patent: 5306947 (1994-04-01), Adachi et al.

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