Patent
1990-02-21
1991-07-30
Hille, Rolf
357 67, H01L 2354
Patent
active
050363824
ABSTRACT:
A multi level wiring structure incorporated in a semiconductor device has a wiring layer sandwiched between insulating films and coupled to upper and lower conduction paths through contact windows formed in the insulating films, respectively, and the wiring layer is implemented by an aluminum-silicon alloy film sandwiched between upper and lower barrier films formed of a conductive substance selected from the group consisting of a refractory metal silicide, a refractory metal and a refractory metal alloy, and the barrier films are operative to prevent undesirable recrystallized silicon precipitates from direct contacting the upper and lower conduction paths, so that the wiring layer is kept well conductive with respect to the upper and lower conduction paths.
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"Barrier Layer Metallurgy for Aluminum Stripes"--Herdzik et al., IBM Technical Disclosure Bulletin, vol. 10, No. 12, May 1968, p. 1979.
Article--Comparison of Electromigration Phenomenon--Between Aluminum Interconnection of Various Multilayered Materials Jun. 12-13, 1989 VMIC Conference pp. 477-483.
Clark Sheila V.
Hille Rolf
Price Joseph W.
Yamaha Corporation
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