Semiconductor device having a multi-bridge-channel and...

Details Semiconductor device having a multi-bridge-channel and... Semiconductor device having a multi-bridge-channel and...

2007-03-06

2007-03-06

Hoang, Quoc (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S341000, C257SE21418, C257S401000, C257SE29257, C438S186000

Reexamination Certificate

active

11285300

ABSTRACT:
In a semiconductor device having a multi-bridge-channel, and a method for fabricating the same, the device includes first and second semiconductor posts protruding from a surface of a semiconductor substrate and having a source and a drain region, respectively, in upper side portions thereof, channel semiconductor layers connecting upper side portions of the first and second semiconductor posts, a gate insulation layer on the channel semiconductor layers and the semiconductor substrate, the gate insulation layer surrounding at least a portion of the channel semiconductor layers, a gate electrode layer on the gate insulation layer to enclose at least a portion of a region between the channel semiconductor layers, and junction auxiliary layers formed between the channel semiconductor layers, the junction auxiliary layers contacting the gate electrode layer and upper side portions of the first and second semiconductor posts, and having a same width as the channel semiconductor layers.

REFERENCES:
patent: 6207511 (2001-03-01), Chapman et al.
patent: 6562665 (2003-05-01), Yu
patent: 6800910 (2004-10-01), Lin et al.
patent: 10-2004-0075566 (2004-08-01), None

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