Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Patent
1996-01-25
1998-10-06
Wallace, Valencia Martin
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
257252, 257254, 257415, 257420, H01L 2714, H01L 2720, H01L 2982
Patent
active
058180931
ABSTRACT:
A semiconductor device (8) has a movable gate (20) over a semiconductor substrate (14) having a top surface (30). Source and drain regions (16-19) are in the substrate, and a channel region (24,25) is between the source and drain regions. The gate is suspended above the source and drain regions such that the gate is movable in a plane substantially parallel to the top surface of the substrate. In one embodiment the device is an accelerometer having the gate connected to a beam (10) with an aspect ratio between 2:1 and 10:1. Also, the gate can have first and second levels (22,23) corresponding to first and second threshold voltages of the channel region.
REFERENCES:
patent: 4873871 (1989-10-01), Bai et al.
patent: 5103279 (1992-04-01), Gutteridge
patent: 5181156 (1993-01-01), Gutteridge et al.
patent: 5447067 (1995-09-01), Biebl et al.
patent: 5504356 (1996-04-01), Takeuchi et al.
patent: 5572057 (1996-11-01), Yammaoto et al.
Gutteridge Ronald J.
Kniffin Margaret L.
Roop Raymond M.
Zhang Zuoying L.
Dover Rennie William
Martin Wallace Valencia
Motorola Inc.
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