Semiconductor device having a monotonically decreasing impurity

Details Semiconductor device having a monotonically decreasing impurity Semiconductor device having a monotonically decreasing impurity

1998-01-06

2000-05-09

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257655, 438138, 438269, 438923, H01L 2994, H01L 31062, H01L 31113, H01L 31119

Patent

active

060607459

ABSTRACT:
An n.sup.- layer (2E) having a low impurity concentration is epitaxially grown on a surface (S1) of an n.sup.+ silicon substrate (1) having a high impurity concentration to a depth (D), and phosphorus ions (P) are implanted from the surface (S1) to the inside of the n.sup.- layer (2E). A SiO.sub.2 film is formed on the surface S1 by thermal oxidation, and an opening hole is formed in the SiO.sub.2 film. Using the opening hole, p-type impurities are implanted and diffused by thermal oxidation in the ion-implanted n.sup.- layer (2E), forming a p-type diffusion layer (well) from the surface (S1) to a predetermined depth. In this way, an n layer is formed in place of the n.sup.- layer (2E). The concentration distribution of impurity in the n layer monotonically decreases from the side of the surface (S1) and reaches its minimum on the side of an interface (BS). Then, a predetermined electrode is formed, completing the device. Thus, variations in both on-state resistance and breakdown voltage are reduced in a semiconductor device having a pn junction.

REFERENCES:
patent: 4181538 (1980-01-01), Narayan et al.
patent: 5057884 (1991-10-01), Suzuki et al.
patent: 5453390 (1995-09-01), Nishizawa et al.
patent: 5688725 (1997-11-01), Darwish et al.
patent: 5696396 (1997-12-01), Tokura et al.
patent: 5879967 (1999-03-01), Kim

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