Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-08-09
1998-03-24
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 52, 257 55, 257 56, 257 58, 257 62, 257 63, 257 69, 257347, H01C 2904, H01C 2701
Patent
active
057316139
ABSTRACT:
Regions 106 which can be regarded as being monocrystalline are formed locally by irradiating with laser light, and at least the channel-forming region 112 is constructed using these regions. With thin-film transistors which have such a construction it is possible to obtain characteristics which are similar to those which employ monocrystals. Further, by connecting in parallel a plurality of such thin-film transistors it is possible to obtain characteristics which are effectively equivalent to those of a monocrystalline thin-film transistor in which the channel width has been increased.
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Teramoto Satoshi
Yamazaki Shunpei
Abraham Fetsum
Crane Sara W.
Ferguson Jr. Gerald J.
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
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