Semiconductor device having a modified dielectric film

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S006000, C438S598000, C438S622000, C438S638000, C438S673000

Reexamination Certificate

active

07811931

ABSTRACT:
A semiconductor device has a plurality of interconnect layers each including a plurality of interconnect lines. The semiconductor device includes a dielectric film (HDP film) formed by means of high density plasma-enhanced CVD and including an edge formed on the side surface of the topmost-layer interconnect lines, a silicon oxide film formed by modifying a SOG film on the HDP film between adjacent two of the topmost-layer interconnect lines in the element forming region, and a passivation film formed to cover the HDP film and the topmost-layer interconnect lines.

REFERENCES:
patent: 5482900 (1996-01-01), Yang
patent: 2004-134640 (2004-04-01), None

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