Semiconductor device having a metalized via hole

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

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Details

257734, 257664, 333247, H01L 2302, H01L 2313, H01P 308

Patent

active

054061253

ABSTRACT:
A semiconductor device having a metalized via hole used when mounting and connecting semiconductor chips, such as microwave chips, digital chips, analog chips and the like, on a top portion of a metalized carrier substrate is described herein. Each chip includes electrical circuitry on a top portion thereof with the circuitry connected to one end of a transmission line. Another end of the transmission line is connected to a metalized via hole. The via hole passes from the top portion of the chip to a bottom portion of the chip. The chip when mounted on the substrate is positioned over the top portion of the substrate and lowered thereon either by hand or with a mechanical chip carrying device. The bottom portion of the metalized via hole is indexed over a top of one end of a transmission line on the top portion of the substrate with the indexing tolerance between the two interfacing surfaces in a range of 0.5 to 10 mils. The close tolerance of less than one mil and up to 10 mils or greater may vary depending on the frequency of the application. Also, the close tolerance of the connection allows for proper alignment and uniform impedance transition between the chip and the substrate. After indexing the bottom of the via hole on top of the end of the transmission line on the substrate, the chip is bonded to the substrate. The semiconductor chip may be attached to the carrier substrate using solder. A very thin layer of solder is used to minimize thermal and electrical resistance and to establish a necessary integrity of chip-to-substrate interface attachment.

REFERENCES:
patent: 3761782 (1973-09-01), Youmans
patent: 3867759 (1975-02-01), Siefker

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