Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-03-31
2000-07-04
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257768, H01L 21338
Patent
active
060842792
ABSTRACT:
Metal semiconductor nitride gate electrodes (40, 70) are formed for use in a semiconductor device (60). The gate electrodes (40, 70) may be formed by sputter deposition, low pressure chemical vapor deposition (LPCVD), or plasma enhanced chemical vapor deposition (PECVD). The materials are expected to etch similar to silicon-containing compounds and may be etched in traditional halide-based etching chemistries. The metal semiconductor nitride gate electrodes (40, 70) are relatively stable, can be formed relatively thinner than traditional gate electrodes (40, 70) and work functions near the middle of the band gap for the material of the substrate (12).
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Adetutu Olubunmi
Maiti Bikas
Nguyen Bich-Yen
Olowolafe J. Olufemi
Tobin Philip J.
Meyer George R.
Monin, Jr. Donald L.
Motorola Inc.
Rodriguez Robert A.
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