Semiconductor device having a metal containing layer overlying a

Details Semiconductor device having a metal containing layer overlying a Semiconductor device having a metal containing layer overlying a

1998-07-20

2000-04-11

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257900, H01L 2976

Patent

active

060491140

ABSTRACT:
A method of forming a semiconductor device includes providing a substrate (10) and depositing a gate dielectric (12) overlying the substrate (10). A gate is formed overlying the gate dielectric (12). The gate has a first sidewall and comprises a metal-containing layer (14) overlying the gate dielectric (12). A first spacer layer (20) is deposited over the gate and the substrate (10). A portion of the first spacer layer along the first sidewall forms a first spacer (22). A liner layer (30) is deposited over the gate and the substrate (10), and a second spacer layer (32) is deposited over the liner layer (30). The second spacer layer (32) is etched to leave a portion of the second spacer layer (32) along the first sidewall to form a second spacer (34). Also disclosed is a metal gate structure of a semiconductor device.

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