Semiconductor device having a memory cell

Details Semiconductor device having a memory cell Semiconductor device having a memory cell

1992-12-14

1994-07-12

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Semiconductive

365174, G11C 1134

Patent

active

053294815

ABSTRACT:
A semiconductor device with at least one programmable memory cell which includes a bipolar transistor (T.sub.1) with an emitter (11) and a collector (12) of a first conductivity type and a base (10) of a second, opposite conductivity type. The emitter (11) and collector (12) are coupled to a first supply line (100) and a second supply line (200), respectively. The base (10) is coupled to writing means (WRITE) through a control transistor (T.sub.2). Reading means (READ) are included in a current path (I) which extends between the first supply line (100) and the second supply line (200) and which includes a current path between the emitter (11) and collector (12). In a preferred embodiment, the collector (12) is in addition coupled to the second supply line (200) via a switchable load (T.sub.5).

REFERENCES:
patent: 4090254 (1978-05-01), Ho et al.
patent: 5060194 (1991-10-01), Sakui et al.

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