Semiconductor device having a mask programmable memory and manuf

Details Semiconductor device having a mask programmable memory and manuf Semiconductor device having a mask programmable memory and manuf

1997-10-28

1998-09-22

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257408, 257336, 36518901, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

058118624

ABSTRACT:
A semiconductor device having a multi-value memory including an offset ROM and a manufacturing method thereof can be obtained which allows accurate formation of a source/drain region and an offset region. In this semiconductor device, an offset source/drain region is provided so that a side end portion thereof is positioned substantially in flush with a lower end of an external surface of a sidewall insulating film placed on a side surface of a first gate electrode. Consequently, the offset source/drain region can be formed easily in a self-aligned manner by ion implantation using the sidewall insulating film as a mask, thereby forming the offset region accurately in a self-aligned manner.

REFERENCES:
patent: 4847808 (1989-07-01), Kobatake
patent: 5117389 (1992-05-01), Yiu
patent: 5258958 (1993-11-01), Iwahashi et al.
patent: 5328863 (1994-07-01), Cappelletti et al.
patent: 5432103 (1995-07-01), Miller
German Office Action dated Feb. 12, 1997 and translation thereof.

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