Semiconductor device having a lower parasitic capacitance

Details Semiconductor device having a lower parasitic capacitance Semiconductor device having a lower parasitic capacitance

2005-11-01

2005-11-01

Hu, Shouxiang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S382000, C257S412000

Reexamination Certificate

active

06960808

ABSTRACT:
A method for fabricating a semiconductor device is described. A gate dielectric layer is formed on a substrate, and several gate structures having a gate conductor, a cap layer and spacers are formed on the gate dielectric layer. A mask layer is formed over the substrate covering a portion of the gate structures. Removing the cap layer and spacers that are not covered by the mask layer. After the mask layer is removed, a dielectric layer is formed over the substrate covering the gate structures. A self-aligned contact-hole is formed in the dielectric layer. A conductive layer is formed in the self-aligned contact hole and on the dielectric layer. Since the cap layer and spacers that are not covered by the mask layer are removed and substituted by the dielectric layer having lowerdielectric constant property, the parasitic capacitance can be reduced.

REFERENCES:
patent: 6017813 (2000-01-01), Kuo
patent: 6153485 (2000-11-01), Pey et al.
patent: 6326257 (2001-12-01), Hsu
patent: 6482699 (2002-11-01), Hu et al.
patent: 6630721 (2003-10-01), Ligon
patent: 2003/0052353 (2003-03-01), Fujiwara et al.
patent: 2004/0129959 (2004-07-01), Kim et al.
Chuang, D. R.,VLSI Process Technology,Feb. 15, 1997, p. 404, Figure 11-9.

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