Semiconductor device having a lateral diode structure

Details Semiconductor device having a lateral diode structure Semiconductor device having a lateral diode structure

2007-10-23

2007-10-23

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S122000, C257S130000

Reexamination Certificate

active

11181926

ABSTRACT:
A semiconductor device comprises: a semiconductor layer of a first conductivity type; a first semiconductor region of a second conductivity type provided on the semiconductor layer, the first semiconductor region being one of an anode region and a cathode region; a second semiconductor region of the first conductivity type provided on the first semiconductor region, the second semiconductor region being the other of the anode region and the cathode region; and a semiconductor buried region of the second conductivity type provided between the semiconductor layer and the first semiconductor region. The semiconductor buried region has an aperture where the first semiconductor region is in contact with the semiconductor layer.

REFERENCES:
patent: 5654574 (1997-08-01), Williams et al.
patent: 6489653 (2002-12-01), Watanabe et al.
patent: 2004/0211884 (2004-10-01), Fang et al.
patent: 7-130865 (1995-05-01), None

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