Semiconductor device having a large sense voltage

Details Semiconductor device having a large sense voltage Semiconductor device having a large sense voltage

1992-02-21

1996-10-08

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257335, 257336, 257337, 257338, 257339, 257341, 257390, 257500, 257504, 257547, 257548, 257550, 437 48, 437 74, 437913, H01L 2976, H01L 21265

Patent

active

055634370

ABSTRACT:
A large sense voltage is produced by the semiconductor device of the present invention. The semiconductor device, utilizing current mirror techniques, is comprised of a power MOSFET having a plurality of power cells and a plurality of sense cells formed in a semiconductor epitaxial layer. The large sense voltage is provided by isolating and separating the plurality of power cells from the plurality of sense cells by at least the thickness of the semiconductor epitaxial layer. Isolation can be provided by forming a plurality of inactive cells or an elongated cell between the plurality of power cells and the plurality of sense cells. In addition, high voltage capabilities can be maintained by including a partially active region adjacent the power cells to provide for good termination.

REFERENCES:
patent: 4931844 (1990-06-01), Zommer

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