Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode
Patent
1993-12-08
1999-09-28
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
Field relief electrode
257488, 257491, 257495, 257630, H01L 2358
Patent
active
059593423
ABSTRACT:
A high voltage semiconductor device having an improved junction termination extension for increasing the surface breakdown junction voltage. The device comprises a semiconductor substrate (10) of a first electrical conductivity type having a major surface (24) with an edge (26). The substrate has a first impurity region (22) of a second electrical conductivity type formed therein and having a first doping concentration and a second impurity region (28) of a said second electrical conductivity type, having a second doping concentration less than the first doping concentration, formed in the substrate between the first impurity region and the edge, and a field shield plate (30) disposed on the major surface in conductive relation with the first impurity region. The first field shield plate has an outer edge which terminates above the second impurity region.
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Lucent Technologies - Inc.
Ngo Ngan V.
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