Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2005-01-11
2005-01-11
Chaudhari, Chandra (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
Reexamination Certificate
active
06841851
ABSTRACT:
A semiconductor device and a method for manufacturing the same, wherein a gate electrode structure is formed on a surface of a semiconductor substrate. Next, a gate poly oxide (GPOX) layer is deposited on a surface of the gate electrode structure and on the semiconductor substrate. Then, the surface of the semiconductor substrate is cleaned to remove any residue and the GPOX layer remaining on the semiconductor substrate. Next, an etch stopper is formed on the surface of the gate electrode structure and on the semiconductor substrate. Last, a high-density plasma (HDP) oxide layer is deposited on the etch stopper. The semiconductor device and method for manufacturing the same are capable of preventing bubble defects.
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Chaudhari Chandra
Lee & Sterba, P.C.
Samsung Electronics Co,. Ltd.
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