Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-10-05
1997-12-16
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257330, 257331, 257332, 257342, 257627, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
056988800
ABSTRACT:
A manufacturing method for a semiconductor device, which can attain a low ion voltage in a manufacturing method for a semiconductor device involving a process for forming a groove by etching prior to selective oxidation, selectively oxidizing a region including the groove and thereby making a channel part of the groove, is disclosed. A groove part is thermally oxidized by using a silicon nitride film as a mask. A LOCOS oxide film is formed by this thermal oxidation, and concurrently a U-groove is formed on the surface of an n.sup.- -type epitaxial layer eroded by the LOCOS oxide film, and the shape of the U-groove is fixed. A curve part formed during a chemical dry etching process remains as a curve part on the side surface of the U-groove. Then, an n.sup.+ -type source layer is formed by means of thermal diffusion to a junction thickness of 0.5 to 1 .mu.m, and a channel is set up as well. The junction depth obtained by this thermal diffusion is set up more deeply than the curve part which is formed during the above etching and remains on the side surface of the U-groove after the above selective thermal oxidation.
REFERENCES:
patent: 5399515 (1995-03-01), Davis et al.
patent: 5460985 (1995-10-01), Tokura et al.
Norihito Tokura et al., "The DMOS Consisting of Channel Region Defined by LOCOS (LOCOS-DMOS): . . . MOSFET" IEEE 5th International Symposium on Power Semiconductor Devices and ICs, May 18-20, 1993 pp. 135-140.
Nikkei Electronics 1986 5.19 (No. 395).
Kataoka Mitsuhiro
Takahashi Shigeki
Takeuchi Yuuichi
Tokura Norihito
Yamamoto Tsuyoshi
Fahmy Wael
Nippondenso Co. Ltd.
Weiss Howard
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