Semiconductor device having a germanium layer as a channel...

Details Semiconductor device having a germanium layer as a channel... Semiconductor device having a germanium layer as a channel...

2009-12-28

2011-10-04

Geyer, Scott B (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S197000, C438S479000, C438S585000

Reexamination Certificate

active

08030140

ABSTRACT:
A method for manufacturing a semiconductor device comprises forming an insulating layer on a polymer substrate, growing a germanium layer on the insulating layer, forming a gate pattern on the germanium layer, forming a metal layer on the germanium layer including the gate pattern, annealing the metal layer to form a compound layer mixed with the metal layer and the germanium layer, and forming a contact by etching the metal layer.

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