Semiconductor device having a gate with a thin conductive layer

Details Semiconductor device having a gate with a thin conductive layer Semiconductor device having a gate with a thin conductive layer

2007-06-26

2007-06-26

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S407000

Reexamination Certificate

active

10944306

ABSTRACT:
A semiconductor device (10) having a gate (16, 18or16, 18, 26, 28) with a thin conductive layer (18) is described. As the physical dimensions of semiconductor devices are scaled below the sub-micron regime, very thin gate dielectrics (16) are used. One problem encountered with very thin gate dielectrics is that the carriers can tunnel through the gate dielectric material, thus increasing the undesirable leakage current in the device. By using a thin layer for conductive layer (18), quantum confinement of carriers within conductive layer (18) can be induced. This quantum confinement removes modes which are propagating in the direction normal to the interfacial plane15from the Fermi level. Thus, the undesirable leakage current in the device (10) can be reduced. Additional conductive layers (e.g.28) may be used to provide more carriers.

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