Semiconductor device having a gate insulating layer being...

Details Semiconductor device having a gate insulating layer being... Semiconductor device having a gate insulating layer being...

2007-02-20

2007-02-20

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S368000, C257S411000

Reexamination Certificate

active

10910574

ABSTRACT:
A semiconductor device constitutes an electric field effect type transistor having a semiconductor substrate, a gate insulating layer formed on the substrate and a gate electrode formed on the gate insulating layer. The gate insulating layer is mainly formed of silicon oxynitride (SiON) and a strain state of the gate insulating layer is a compressed strain state.

REFERENCES:
patent: 6548370 (2003-04-01), Kasahara et al.
patent: 6614064 (2003-09-01), Besser et al.
patent: 2002/0093046 (2002-07-01), Moriya et al.
patent: 2000-58831 (2000-02-01), None
patent: 2002-246591 (2002-08-01), None
Shin-ichi Takagi, et al., “A New I-V Model for Stress-Induced Leakage Current Including Tunneling,” IEEE Transactions on Electron Devices vol 46 No. 2 Feb. 1999.

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