Semiconductor device having a gate electrode of polycrystal laye

Details Semiconductor device having a gate electrode of polycrystal laye Semiconductor device having a gate electrode of polycrystal laye

1993-08-26

1995-01-10

Loke, Steven Ho Yin

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257627, 257741, 257756, H01L 2976, H01L 2904, H01L 2348, H01L 2352

Patent

active

053810325

ABSTRACT:
A semiconductor device without erroneous operation and deterioration of characteristics in a transistor even when an impurity region is formed in self-alignment by ion implantation using a gate electrode as a mask, and a method of manufacturing thereof are disclosed. This semiconductor device includes a gate electrode formed of a polycrystal silicon layer 4b having the crystal orientation of the crystal grains arranged in a definite orientation. By implanting ions at a predetermined angle with respect to the crystallographic axis of the crystal grains of the polycrystal silicon layer 4b in forming a p.sup.+ impurity region 5 by ion implantation using the gate electrode as a mask, the channeling phenomenon where ions pass through the gate electrode is prevented. Therefore, generation of erroneous operation and deterioration of characteristics in a transistor are prevented in forming an impurity region in self-alignment by ion implantation using the gate electrode as a mask.

REFERENCES:
patent: 4808555 (1989-02-01), Mauntel et al.
patent: 5177569 (1993-01-01), Koyama et al.
English Language Translation of Japanese Unexamined Patent Application No. 59-32170 (Sakurai) by U.S. Patent and Trademark Office, May, 1993.
Webster's II, New Riverside University Dictionary, 1984, p. 524.
MOS LSI Manufacturing Technology, Nikkei McGraw-Hill, pp. 89-91, 1985.
Appl. Phys. Lett. 36(6), 15 Mar. 1980, pp. 447-449, "Channeling of Implanted Phosphorus Through Polycrystalline Silicon" by Seidel.

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