Semiconductor device having a gate electrode in a grove and a di

Details Semiconductor device having a gate electrode in a grove and a di Semiconductor device having a gate electrode in a grove and a di

1996-04-26

1998-02-03

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257330, 257333, 257341, 257389, 257397, 257263, H01L 2976, H01L 2994

Patent

active

057147817

ABSTRACT:
A power MOSFET having a groove for forming a channel improved for shortening the switching time and increasing the dielectric breakdown strength of the gate oxide film is disclosed. The power MOSFET includes a concave structure in which a gate oxide film at a groove bottom is thickened. Namely, since the gate oxide film between a gate electrode and a first conductivity type semiconductor layer is thick, the capacitance of the oxide film therebetween is reduced. Therefore, the input and output capacitance of the gate oxide film can be reduced, and switching loss can be also reduced since the switching time can be shortened. Further, greater dielectric breakdown strength of the gate oxide film can be obtained as a result of the thickened gate oxide film at the groove bottom.

REFERENCES:
patent: 4503449 (1985-03-01), David et al.
patent: 4731343 (1988-03-01), Beinvogl
patent: 4824795 (1989-04-01), Blanchard
patent: 4929987 (1990-05-01), Einthoven
patent: 4992390 (1991-02-01), Chang
patent: 5460985 (1995-10-01), Tokura et al.
patent: 5470770 (1995-11-01), Takahashi et al.
patent: 5473176 (1995-12-01), Kakumoto
Silicon Processing, vol. 1, S. Wolf & R.N. Tauber 1986.
Tokura, et al: "The DMOS Consisting of Channel Region Defined by LOCOS (LOCOS-DMOS): A New Process/Device Technology for Low On-Resistance Power MOSFET" 5th Intn'l Symposium On Power Semiconductor Device And ICs, May 18-20, 1993, pp. 135-140.
Tokura, et al: "Concave-DMOSFET: A New Super Low On-Resistance Power MOSFET", The 1994 Intn'l Conference On Solid State Devices And Materials, Aug. 23-35, 1994, Ch.B-1-2, pp.763-765.
Sakai, et al: "Methods to Improve the Surface Planarity of Locally Oxidized Silicon Devices", J. Electrochem. Soc.: Solid-State Science And Technology, vol. 124, No. 2, Feb. 1977, pp. 318-320.
Tokura, et al: "Concave-DMOSFET: A New Super-Low on Resistance Power MOSFET", Japanese Journal of Applied Physics, vol. 34, No. 2B, Feb. 1995, pp. 903-908.

Affiliated with

Also associated with

Rating

Semiconductor device having a gate electrode in a grove and a di does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having a gate electrode in a grove and a di, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a gate electrode in a grove and a di will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-665130